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| CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7002A and CMLDM7002AJ are special dual versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout configuration, while the CMLDM7002AJ utilizes the Japanese pinout configuration. These special Dual Transistor devices offer low rDS(ON) and low VDS (ON). MARKING CODE: CMLDM7002A: L02 CMLDM7002AJ: 02J SYMBOL VDS VDG VGS ID IS IDM ISM PD PD PD TJ,Tstg JA 60 60 40 280 280 1.5 1.5 350 300 150 -65 to +150 357 UNITS V V V mA mA A A mW (Note 1) mW (Note 2) mW (Note 3) C C/W SOT-563 CASE MAXIMUM RATINGS (TA=25C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Power Dissipation Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER TRANSISTOR (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF VGS=20V, VDS=0V 100 IGSSR VGS=20V, VDS=0V 100 IDSS VDS=60V, VGS=0V 1.0 IDSS VDS=60V, VGS=0V, Tj=125C 500 ID(ON) VGS=10V, VDS 2VDS(ON) 500 BVDSS VGS=0V, ID=10A 60 VGS(th) VDS=VGS, ID=250A 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.0 VDS(ON) VGS=5.0V, ID=50mA 0.15 rDS(ON) VGS=10V, ID=500mA 2.0 rDS(ON) VGS=10V, ID=500mA, Tj=125C 3.5 rDS(ON) VGS=5.0V, ID=50mA 3.0 rDS(ON) VGS=5.0V, ID=50mA, Tj=125C 5.0 gFS VDS 2VDS(ON), ID=200mA 80 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2 UNITS nA nA A A mA V V V V mmhos R3 (19-December 2003) Central TM CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Semiconductor Corp. ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ton VDD=30V, VGS=10V, ID=200mA, 20 ns toff RG=25, RL=150 20 ns VSD VGS=0V, IS=400mA 1.2 V SOT-563 CASE - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 CMLDM7002A (USA Pinout) CMLDM7002AJ (Japanese Pinout) LEAD CODE: 1) GATE Q1 2) SOURCE Q1 3) DRAIN Q2 4) GATE Q2 5) SOURCE Q2 6) DRAIN Q1 MARKING CODE: L02 LEAD CODE: 1) SOURCE Q1 2) GATE Q1 3) DRAIN Q2 4) SOURCE Q2 5) GATE Q2 6) DRAIN Q1 MARKING CODE: 02J R3 (19-December 2003) |
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